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IPG20N06S3L-35
Infineon Technologies
IPG20N06S3L-35
MOSFET 2N-CH 55V 20A 8TDSON
8-PowerVDFN
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IPG20N06S3L-35 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | OptiMOS™ | |
| Technology | MOSFET (Metal Oxide) | |
| Configuration | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 55V | |
| Current - Continuous Drain (Id) @ 25°C | 20A | |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 11A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 15µA | |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1730pF @ 25V | |
| Power - Max | 30W | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Supplier Device Package | PG-TDSON-8-4 |
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