Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPD65R380E6BTMA1

Infineon Technologies
IPD65R380E6BTMA1
MOSFET N-CH 650V 10.6A TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
Active
IPD65R380E6BTMA1
Payment Methods: paypal visa mastercard westernunion unionpay
Shipping Methods: DHL TNT FEDEX UPS SF
IPD65R380E6BTMA1 Attributes
TYPE DESCRIPTION SELECT
Series CoolMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 100 V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
7,315 In Stock
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: N/A
Total Price: N/A
This price is for reference only, please contact us for now price support@easev.net.

Quick Inquiry


100,000+
Total Number Of Customers
3,000,000+
Stock Inventory
1200+
Worldwide Manufacturers
500,000+
Locally Available Stock