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IPD65R380E6BTMA1
Infineon Technologies
IPD65R380E6BTMA1
MOSFET N-CH 650V 10.6A TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
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IPD65R380E6BTMA1 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | CoolMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 380mOhm @ 3.2A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 320µA | |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 83W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-TO252-3 | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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