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IPD50R650CEATMA1
Infineon Technologies
IPD50R650CEATMA1
MOSFET N-CH 500V 6.1A TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
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IPD50R650CEATMA1 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | CoolMOS™ CE | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 500 V | |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 13V | |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 1.8A, 13V | |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA | |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 342 pF @ 100 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 69W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3 | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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