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IPD068N10N3GBTMA1
Infineon Technologies
IPD068N10N3GBTMA1
MOSFET N-CH 100V 90A TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
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IPD068N10N3GBTMA1 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | OptiMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 90A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA | |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4910 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 150W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3 | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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