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IPB04N03LB G
Infineon Technologies
IPB04N03LB G
MOSFET N-CH 30V 80A D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IPB04N03LB G Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | OptiMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 55A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 70µA | |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 5 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 5203 pF @ 15 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 107W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-3 | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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