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IPA50R650CE
Infineon Technologies
IPA50R650CE
MOSFET N-CH 500V 6.1A TO220-FP
TO-220-3 Full Pack
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IPA50R650CE Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | CoolMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 500 V | |
Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 13V | |
Rds On (Max) @ Id, Vgs | 650mOhm @ 1.8A, 13V | |
Vgs(th) (Max) @ Id | 3.5V @ 150µA | |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 342 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 27.2W (Tc) | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO220-FP | |
Package / Case | TO-220-3 Full Pack |
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