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IDL02G65C5XUMA1
Infineon Technologies
IDL02G65C5XUMA1
DIODE SIL CARBIDE 650V 2A VSON-4
4-PowerTSFN
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IDL02G65C5XUMA1 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | CoolSiC™+ | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Current - Average Rectified (Io) | 2A | |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 2 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 35 µA @ 650 V | |
| Capacitance @ Vr, F | 70pF @ 1V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-PowerTSFN | |
| Supplier Device Package | PG-VSON-4 | |
| Operating Temperature - Junction | -55°C ~ 175°C |
1,601
In Stock
Minimum: 1
Unit Price:
$0.69
Total Price:
$0.69
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