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F411MR12W2M1B76BOMA1

Infineon Technologies
F411MR12W2M1B76BOMA1
LOW POWER EASY AG-EASY2B-2
Module
Active
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F411MR12W2M1B76BOMA1 Attributes
TYPE DESCRIPTION SELECT
Series EasyPACK™ CoolSiC™
Technology Silicon Carbide (SiC)
Configuration 4 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 100A (Tj)
Rds On (Max) @ Id, Vgs 11.3mOhm @ 100A, 15V
Vgs(th) (Max) @ Id 5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs 248nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 7360pF @ 800V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package AG-EASY1B-2
1,631 In Stock
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Minimum: 1
Unit Price: $307.43
Total Price: $307.43
This price is for reference only, please contact us for now price support@easev.net.

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