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BSS209PW
Infineon Technologies
BSS209PW
MOSFET P-CH 20V 580MA SOT323-3
SC-70, SOT-323
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BSS209PW Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | OptiMOS™ | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20 V | |
Current - Continuous Drain (Id) @ 25°C | 580mA (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 550mOhm @ 580mA, 4.5V | |
Vgs(th) (Max) @ Id | 1.2V @ 3.5µA | |
Gate Charge (Qg) (Max) @ Vgs | 1.38 nC @ 4.5 V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | 89.9 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 520mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-SOT323 | |
Package / Case | SC-70, SOT-323 |
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