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BSS139 E6327

Infineon Technologies
BSS139 E6327
MOSFET N-CH 250V 100MA SOT23-3
TO-236-3, SC-59, SOT-23-3
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BSS139 E6327
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BSS139 E6327 Attributes
TYPE DESCRIPTION SELECT
Series SIPMOS®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Rds On (Max) @ Id, Vgs 14Ohm @ 0.1mA, 10V
Vgs(th) (Max) @ Id 1V @ 56µA
Gate Charge (Qg) (Max) @ Vgs 3.5 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 76 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3
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