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BSP129E6327
Infineon Technologies
BSP129E6327
MOSFET N-CH 240V 350MA SOT223-4
TO-261-4, TO-261AA
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BSP129E6327 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | SIPMOS® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 240 V | |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V | |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 350mA, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 108µA | |
| Gate Charge (Qg) (Max) @ Vgs | 5.7 nC @ 5 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 108 pF @ 25 V | |
| FET Feature | Depletion Mode | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-SOT223-4 | |
| Package / Case | TO-261-4, TO-261AA |
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