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BSC022N03SG

Infineon Technologies
BSC022N03SG
MOSFET N-CH 30V 28A/100A TDSON
8-PowerTDFN
Active
BSC022N03SG
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BSC022N03SG Attributes
TYPE DESCRIPTION SELECT
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8290 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
36 In Stock
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: N/A
Total Price: N/A
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