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BSB012NE2LX

Infineon Technologies
BSB012NE2LX
MOSFET N-CH 25V 37A/170A 2WDSON
3-WDSON
Active
BSB012NE2LX
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BSB012NE2LX Attributes
TYPE DESCRIPTION SELECT
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 37A (Ta), 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 12 V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 57W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON
7,662 In Stock
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Minimum: 1
Unit Price: N/A
Total Price: N/A
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