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BCR198E6327HTSA1
Infineon Technologies
BCR198E6327HTSA1
TRANS PREBIAS PNP 50V SOT23-3
TO-236-3, SC-59, SOT-23-3
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BCR198E6327HTSA1 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Transistor Type | PNP - Pre-Biased | |
| Current - Collector (Ic) (Max) | 100 mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | |
| Resistor - Base (R1) | 47 kOhms | |
| Resistor - Emitter Base (R2) | 47 kOhms | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Frequency - Transition | 190 MHz | |
| Power - Max | 200 mW | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | PG-SOT23 |
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