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HSP70N65
HY Electronic (Cayman) Limited
HSP70N65
N-Channel SiC power MOSFET
TO-247-3
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HSP70N65 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | SiC (Silicon Carbide Junction Transistor) | |
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | 70A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 18V | |
Rds On (Max) @ Id, Vgs | 39mOhm @ 27A, 18V | |
Vgs(th) (Max) @ Id | 5.6V @ 13.3mA | |
Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 18 V | |
Vgs (Max) | - | |
Input Capacitance (Ciss) (Max) @ Vds | 1526 pF @ 500 V | |
FET Feature | - | |
Power Dissipation (Max) | - | |
Operating Temperature | 175°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247 | |
Package / Case | TO-247-3 |
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