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HTNFET-TC

Honeywell Aerospace
HTNFET-TC
MOSFET N-CH 55V 4-PIN
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Active
HTNFET-TC
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HTNFET-TC Attributes
TYPE DESCRIPTION SELECT
Series HTMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 400mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 5 V
Vgs (Max) 10V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 28 V
FET Feature -
Power Dissipation (Max) 50W (Tj)
Operating Temperature -
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package -
Package / Case -
6,280 In Stock
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Total Price: N/A
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