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RFW2N06RLE
Harris Corporation
RFW2N06RLE
N-CHANNEL POWER MOSFET
4-DIP (0.300", 7.62mm)
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RFW2N06RLE Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 60 V | |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 5V | |
Rds On (Max) @ Id, Vgs | 200mOhm @ 2A, 5V | |
Vgs(th) (Max) @ Id | 2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | |
Vgs (Max) | +10V, -5V | |
Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 1.09W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | 4-DIP, Hexdip | |
Package / Case | 4-DIP (0.300", 7.62mm) |
3,800
In Stock
Minimum: 1
Unit Price:
$1.26
Total Price:
$1.26
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