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RFG50N05

Harris Corporation
RFG50N05
N-CHANNEL POWER MOSFET
TO-247-3
Active
RFG50N05
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RFG50N05 Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250nA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 132W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
6,355 In Stock
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Minimum: 1
Unit Price: $3.65
Total Price: $3.65
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