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RFD16N05LSM

Harris Corporation
RFD16N05LSM
N-CHANNEL POWER MOSFET
TO-252-3, DPak (2 Leads + Tab), SC-63
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RFD16N05LSM
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RFD16N05LSM Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 47mOhm @ 16A, 5V
Vgs(th) (Max) @ Id 2V @ 250mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
1,394 In Stock
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Minimum: 1
Unit Price: $0.60
Total Price: $0.60
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