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GT52N10D5I
Goford Semiconductor
GT52N10D5I
N100V,65A,RD<8M@10V,VTH1.0V~2.5V
8-PowerTDFN
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GT52N10D5I Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100 V | |
Current - Continuous Drain (Id) @ 25°C | 65A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 8Ohm @ 20A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2428 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 79W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-DFN (4.9x5.75) | |
Package / Case | 8-PowerTDFN |
6,423
In Stock
Minimum: 1
Unit Price:
$0.27
Total Price:
$0.27
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