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GT400P10T

Goford Semiconductor
GT400P10T
MOSFET P-CH 100V 35A TO-220
TO-220-3
Active
GT400P10T
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GT400P10T Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3223 pF @ 50 V
FET Feature -
Power Dissipation (Max) 106W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
8,175 In Stock
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Unit Price: $1.15
Total Price: $1.15
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