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GT080N10M
Goford Semiconductor
GT080N10M
N100V, 70A,RD<7.5M@10V,VTH1V~3V,
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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GT080N10M Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2125 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 100W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-263 | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
903
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Unit Price:
$0.43
Total Price:
$0.43
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