Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
GS170R025Q4
Goford Semiconductor
GS170R025Q4
SiC MOSFET N-CH 1700V 100A TO-2
TO-247-4
Active
Payment Methods:
Shipping Methods:
GS170R025Q4 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 1700 V | |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V | |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 50A, 15V | |
| Vgs(th) (Max) @ Id | 3.6V @ 20mA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | -8V, +19V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1455 pF @ 1000 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 470W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247-4L | |
| Package / Case | TO-247-4 |
8,454
In Stock
Minimum: 1
Unit Price:
N/A
Total Price:
N/A
This price is for reference only, please contact us for now price support@easev.net.
