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GS120R080Q4
Goford Semiconductor
GS120R080Q4
SiC MOSFET N-CH 1200V 32A TO-24
TO-247-4
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GS120R080Q4 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 18V | |
| Vgs(th) (Max) @ Id | 4V @ 5mA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | -10V, +20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1455 pF @ 1000 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 175W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247-4L | |
| Package / Case | TO-247-4 |
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