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GC11N65K
Goford Semiconductor
GC11N65K
N650V,RD(MAX)<360M@10V,VTH2.5V~4
TO-252-3, DPak (2 Leads + Tab), SC-63
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GC11N65K Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 360mOhm @ 5.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 901 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 78W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-252 | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
8,437
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