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GC11N65D5
Goford Semiconductor
GC11N65D5
N650V, 11A,RD<360M@10V,VTH2.5V~4
8-PowerTDFN
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GC11N65D5 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | G | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 901 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 78W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-DFN (4.9x5.75) | |
| Package / Case | 8-PowerTDFN |
1,533
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Minimum: 1
Unit Price:
$0.51
Total Price:
$0.51
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