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GC080N65QF
Goford Semiconductor
GC080N65QF
MOSFET N-CH 650V 50A TO-247
TO-247-3
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GC080N65QF Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 80mOhm @ 16A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 380 V | |
FET Feature | - | |
Power Dissipation (Max) | 298W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247 | |
Package / Case | TO-247-3 |
7,534
In Stock
Minimum: 1
Unit Price:
$8.31
Total Price:
$8.31
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