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G900P15K

Goford Semiconductor
G900P15K
P-150V,-50A,RD(MAX)<80M@-10V,VTH
TO-252-3, DPak (2 Leads + Tab), SC-63
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G900P15K
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G900P15K Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3918 pF @ 75 V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
1,596 In Stock
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Unit Price: $0.40
Total Price: $0.40
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