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G69F
Goford Semiconductor
G69F
P-12V,-16A,RD(MAX)<18M@-4.5V,VTH
6-UDFN Exposed Pad
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G69F Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 12 V | |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 4.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 4.5 V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 18W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-DFN (2x2) | |
| Package / Case | 6-UDFN Exposed Pad |
3,031
In Stock
Minimum: 1
Unit Price:
$0.08
Total Price:
$0.08
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