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G30N02T
Goford Semiconductor
G30N02T
N20V,RD(MAX)<13M@4.5V,VTH0.5V~1.
TO-220-3
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G30N02T Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V | |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 20A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 40W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220 | |
| Package / Case | TO-220-3 |
3,362
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$0.14
Total Price:
$0.14
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