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G300P06D5

Goford Semiconductor
G300P06D5
P-60V,-40A,RD(MAX)<30M@-10V,VTH-
8-PowerTDFN
Active
G300P06D5
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G300P06D5 Attributes
TYPE DESCRIPTION SELECT
Series G
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2705 pF @ 30 V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-DFN (4.9x5.75)
Package / Case 8-PowerTDFN
3,059 In Stock
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Minimum: 1
Unit Price: $0.17
Total Price: $0.17
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