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G1007
Goford Semiconductor
G1007
N100V,7A,RD<110M@10V,VTH1.0V~3.0
8-SOIC (0.154", 3.90mm Width)
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G1007 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 612 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 28W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SOP | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
3,727
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$0.09
Total Price:
$0.09
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