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G08N02H
Goford Semiconductor
G08N02H
N20V, 12A, RD<11.3M@4.5V,VTH0.5V
TO-261-4, TO-261AA
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G08N02H Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20 V | |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 11.3mOhm @ 1A, 4.5V | |
Vgs(th) (Max) @ Id | 900mV @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 4.5 V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | 1255 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 1.7W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | SOT-223 | |
Package / Case | TO-261-4, TO-261AA |
2,635
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$0.07
Total Price:
$0.07
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