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G5S6506Z
Global Power Technology-GPT
G5S6506Z
DIODE SIL CARB 650V 30.5A 8DFN
8-PowerTDFN
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G5S6506Z Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Current - Average Rectified (Io) | 30.5A | |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 6 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V | |
| Capacitance @ Vr, F | 395pF @ 0V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Supplier Device Package | 8-DFN (4.9x5.75) | |
| Operating Temperature - Junction | -55°C ~ 175°C |
1,339
In Stock
Minimum: 1
Unit Price:
$3.01
Total Price:
$3.01
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