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G4S12020D
Global Power Technology-GPT
G4S12020D
DIODE SIL CARB 1.2KV 75A TO263
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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G4S12020D Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | |
| Current - Average Rectified (Io) | 75A | |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V | |
| Capacitance @ Vr, F | 2600pF @ 0V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Supplier Device Package | TO-263 | |
| Operating Temperature - Junction | -55°C ~ 175°C |
7,157
In Stock
Minimum: 1
Unit Price:
$15.21
Total Price:
$15.21
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