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G4S06510QT
Global Power Technology-GPT
G4S06510QT
DIODE SIL CARB 650V 44.9A 4DFN
4-PowerTSFN
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G4S06510QT Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | SiC (Silicon Carbide) Schottky | |
Voltage - DC Reverse (Vr) (Max) | 650 V | |
Current - Average Rectified (Io) | 44.9A | |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A | |
Speed | No Recovery Time > 500mA (Io) | |
Reverse Recovery Time (trr) | 0 ns | |
Current - Reverse Leakage @ Vr | 50 µA @ 650 V | |
Capacitance @ Vr, F | 550pF @ 0V, 1MHz | |
Mounting Type | Surface Mount | |
Package / Case | 4-PowerTSFN | |
Supplier Device Package | 4-DFN (8x8) | |
Operating Temperature - Junction | -55°C ~ 175°C |
66
In Stock
Minimum: 1
Unit Price:
$3.37
Total Price:
$3.37
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