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G4S06508QT
Global Power Technology-GPT
G4S06508QT
DIODE SIL CARBIDE 650V 34A 4DFN
4-PowerTSFN
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G4S06508QT Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Current - Average Rectified (Io) | 34A | |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V | |
| Capacitance @ Vr, F | 395pF @ 0V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-PowerTSFN | |
| Supplier Device Package | 4-DFN (8x8) | |
| Operating Temperature - Junction | -55°C ~ 175°C |
5,021
In Stock
Minimum: 1
Unit Price:
$2.63
Total Price:
$2.63
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