Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
G4S06506CT
Global Power Technology-GPT
G4S06506CT
DIODE SIL CARB 650V 13.8A TO252
TO-252-3, DPak (2 Leads + Tab), SC-63
Active
Payment Methods:
Shipping Methods:
G4S06506CT Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | SiC (Silicon Carbide) Schottky | |
Voltage - DC Reverse (Vr) (Max) | 650 V | |
Current - Average Rectified (Io) | 13.8A | |
Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 6 A | |
Speed | No Recovery Time > 500mA (Io) | |
Reverse Recovery Time (trr) | 0 ns | |
Current - Reverse Leakage @ Vr | 50 µA @ 650 V | |
Capacitance @ Vr, F | 181pF @ 0V, 1MHz | |
Mounting Type | Surface Mount | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Supplier Device Package | TO-252 | |
Operating Temperature - Junction | -55°C ~ 175°C |
2,016
In Stock
Minimum: 1
Unit Price:
$2.12
Total Price:
$2.12
This price is for reference only, please contact us for now price support@easev.net.