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G4S06506AT
Global Power Technology-GPT
G4S06506AT
DIODE SIC 650V 11.6A TO220AC
TO-220-2
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G4S06506AT Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | SiC (Silicon Carbide) Schottky | |
Voltage - DC Reverse (Vr) (Max) | 650 V | |
Current - Average Rectified (Io) | 11.6A | |
Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 6 A | |
Speed | No Recovery Time > 500mA (Io) | |
Reverse Recovery Time (trr) | 0 ns | |
Current - Reverse Leakage @ Vr | 50 µA @ 650 V | |
Capacitance @ Vr, F | 181pF @ 0V, 1MHz | |
Mounting Type | Through Hole | |
Package / Case | TO-220-2 | |
Supplier Device Package | TO-220AC | |
Operating Temperature - Junction | -55°C ~ 175°C |
4,436
In Stock
Minimum: 1
Unit Price:
$2.12
Total Price:
$2.12
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