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G3S12010H
Global Power Technology-GPT
G3S12010H
DIODE SIC 1.2KV 16.5A TO220F
TO-220-2 Full Pack
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G3S12010H Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | |
| Current - Average Rectified (Io) | 16.5A | |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V | |
| Capacitance @ Vr, F | 765pF @ 0V, 1MHz | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-2 Full Pack | |
| Supplier Device Package | TO-220F | |
| Operating Temperature - Junction | -55°C ~ 175°C |
1,532
In Stock
Minimum: 1
Unit Price:
$13.65
Total Price:
$13.65
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