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G3S12006B
Global Power Technology-GPT
G3S12006B
SIC SCHOTTKY DIODE 1200V 6A 3-PI
TO-247-3
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G3S12006B Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Diode Configuration | 1 Pair Common Cathode | |
Technology | SiC (Silicon Carbide) Schottky | |
Voltage - DC Reverse (Vr) (Max) | 1200 V | |
Current - Average Rectified (Io) (per Diode) | 14A (DC) | |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 3 A | |
Speed | No Recovery Time > 500mA (Io) | |
Reverse Recovery Time (trr) | 0 ns | |
Current - Reverse Leakage @ Vr | 100 µA @ 1200 V | |
Operating Temperature - Junction | -55°C ~ 175°C | |
Mounting Type | Through Hole | |
Package / Case | TO-247-3 | |
Supplier Device Package | TO-247AB |
5,570
In Stock
Minimum: 1
Unit Price:
$5.35
Total Price:
$5.35
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