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G3S12005D
Global Power Technology-GPT
G3S12005D
DIODE SIL CARB 1.2KV 34A TO263
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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G3S12005D Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | SiC (Silicon Carbide) Schottky | |
Voltage - DC Reverse (Vr) (Max) | 1200 V | |
Current - Average Rectified (Io) | 34A | |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 5 A | |
Speed | No Recovery Time > 500mA (Io) | |
Reverse Recovery Time (trr) | 0 ns | |
Current - Reverse Leakage @ Vr | 50 µA @ 1200 V | |
Capacitance @ Vr, F | 475pF @ 0V, 1MHz | |
Mounting Type | Surface Mount | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Supplier Device Package | TO-263 | |
Operating Temperature - Junction | -55°C ~ 175°C |
3,277
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Minimum: 1
Unit Price:
$4.18
Total Price:
$4.18
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