Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
G3S06508H
Global Power Technology-GPT
G3S06508H
DIODE SIL CARB 650V 14A TO220F
TO-220-2 Full Pack
Active
Payment Methods:
Shipping Methods:
G3S06508H Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | SiC (Silicon Carbide) Schottky | |
Voltage - DC Reverse (Vr) (Max) | 650 V | |
Current - Average Rectified (Io) | 14A | |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A | |
Speed | No Recovery Time > 500mA (Io) | |
Reverse Recovery Time (trr) | 0 ns | |
Current - Reverse Leakage @ Vr | 50 µA @ 650 V | |
Capacitance @ Vr, F | 550pF @ 0V, 1MHz | |
Mounting Type | Through Hole | |
Package / Case | TO-220-2 Full Pack | |
Supplier Device Package | TO-220F | |
Operating Temperature - Junction | -55°C ~ 175°C |
5,948
In Stock
Minimum: 1
Unit Price:
$2.61
Total Price:
$2.61
This price is for reference only, please contact us for now price support@easev.net.