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MUR40005CTR
GeneSiC Semiconductor
MUR40005CTR
DIODE MODULE GP 50V 200A 2TOWER
Twin Tower
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MUR40005CTR Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Diode Configuration | 1 Pair Common Anode | |
Technology | Standard | |
Voltage - DC Reverse (Vr) (Max) | 50 V | |
Current - Average Rectified (Io) (per Diode) | 200A | |
Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 125 A | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Reverse Recovery Time (trr) | 90 ns | |
Current - Reverse Leakage @ Vr | 25 µA @ 50 V | |
Operating Temperature - Junction | -55°C ~ 150°C | |
Grade | - | |
Qualification | - | |
Mounting Type | Chassis Mount | |
Package / Case | Twin Tower | |
Supplier Device Package | Twin Tower |
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