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MBR50060CTR
GeneSiC Semiconductor
MBR50060CTR
DIODE MOD SCHOT 600V 250A 2TOWER
Twin Tower
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MBR50060CTR Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Diode Configuration | 1 Pair Common Anode | |
| Technology | Schottky, Reverse Polarity | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Current - Average Rectified (Io) (per Diode) | 250A | |
| Voltage - Forward (Vf) (Max) @ If | 800 mV @ 250 A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 1 mA @ 20 V | |
| Operating Temperature - Junction | -55°C ~ 150°C | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Chassis Mount | |
| Package / Case | Twin Tower | |
| Supplier Device Package | Twin Tower |
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