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GB05MPS17-263
GeneSiC Semiconductor
GB05MPS17-263
DIODE SIL CARB 1.7KV 18A TO263-7
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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GB05MPS17-263 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | SiC Schottky MPS™ | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 1700 V | |
| Current - Average Rectified (Io) | 18A | |
| Voltage - Forward (Vf) (Max) @ If | - | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | - | |
| Capacitance @ Vr, F | 470pF @ 1V, 1MHz | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | |
| Supplier Device Package | TO-263-7 | |
| Operating Temperature - Junction | -55°C ~ 175°C |
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