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GA50JT12-247
GeneSiC Semiconductor
GA50JT12-247
TRANS SJT 1200V 100A TO247AB
TO-247-3
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GA50JT12-247 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| FET Type | - | |
| Technology | SiC (Silicon Carbide Junction Transistor) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 50A | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 7209 pF @ 800 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 583W (Tc) | |
| Operating Temperature | 175°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247AB | |
| Package / Case | TO-247-3 |
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