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GA100JT12-227
GeneSiC Semiconductor
GA100JT12-227
TRANS SJT 1200V 160A SOT227
SOT-227-4, miniBLOC
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GA100JT12-227 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | - | |
Technology | SiC (Silicon Carbide Junction Transistor) | |
Drain to Source Voltage (Vdss) | 1200 V | |
Current - Continuous Drain (Id) @ 25°C | 160A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | - | |
Rds On (Max) @ Id, Vgs | 10mOhm @ 100A | |
Vgs(th) (Max) @ Id | - | |
Gate Charge (Qg) (Max) @ Vgs | - | |
Vgs (Max) | - | |
Input Capacitance (Ciss) (Max) @ Vds | 14400 pF @ 800 V | |
FET Feature | - | |
Power Dissipation (Max) | 535W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Chassis Mount | |
Supplier Device Package | SOT-227 | |
Package / Case | SOT-227-4, miniBLOC |
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