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1N8032-GA
GeneSiC Semiconductor
1N8032-GA
DIODE SIL CARB 650V 2.5A TO257
TO-257-3
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1N8032-GA Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Current - Average Rectified (Io) | 2.5A | |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 2.5 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 5 µA @ 650 V | |
| Capacitance @ Vr, F | 274pF @ 1V, 1MHz | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-257-3 | |
| Supplier Device Package | TO-257 | |
| Operating Temperature - Junction | -55°C ~ 250°C |
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