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GE12160CEA3
GE Aerospace
GE12160CEA3
1200V 1425A SiC Half-Bridge
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GE12160CEA3 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Mfr | GE Aerospace | |
Series | Automotive, AEC-Q101 | |
Package | Bulk | |
FET Type | 2 N-Channel (Half Bridge) | |
FET Feature | Silicon Carbide (SiC) | |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
Current - Continuous Drain (Id) @ 25°C | 1.425kA (Tc) | |
Rds On (Max) @ Id, Vgs | 1.5mOhm @ 475A, 20V | |
Vgs(th) (Max) @ Id | 4.5V @ 480mA | |
Gate Charge (Qg) (Max) @ Vgs | 3744nC @ 18V | |
Input Capacitance (Ciss) (Max) @ Vds | 90000pF @ 600V | |
Power - Max | 3.75kW (Tc) | |
Operating Temperature | 175°C (TJ) | |
Mounting Type | Chassis Mount | |
Package / Case | Module | |
Supplier Device Package | - |
4,244
In Stock
Minimum: 1
Unit Price:
$3231.00
Total Price:
$3231.00
This price is for reference only, please contact us for now price support@easev.net.