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GE12160CEA3

GE Aerospace
GE12160CEA3
1200V 1425A SiC Half-Bridge
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GE12160CEA3
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GE12160CEA3 Attributes
TYPE DESCRIPTION SELECT
Mfr GE Aerospace
Series Automotive, AEC-Q101
Package Bulk
FET Type 2 N-Channel (Half Bridge)
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 1.425kA (Tc)
Rds On (Max) @ Id, Vgs 1.5mOhm @ 475A, 20V
Vgs(th) (Max) @ Id 4.5V @ 480mA
Gate Charge (Qg) (Max) @ Vgs 3744nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 90000pF @ 600V
Power - Max 3.75kW (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
4,244 In Stock
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Unit Price: $3231.00
Total Price: $3231.00
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